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R. J. McIntyre, Multiplication noise in uniform avalanche diodes, IEEE Trans. Electron Devices, ED-13: 164, 1966. 174 AVALANCHE DIODES 23. S. L. Miller, Ionization rates for holes and electrons in silicon, Phys. , 105: 1246–1249, 1957. 24. D. J. Muehlner, private communication, ca. 1984. 25. S. D. Pesonick, Statistics of a general class of avalanche detectors with applications to optical communication, Bell Syst. Tech. , 50: 3075, 1971. 26. R. J. McIntyre, The distribution of gains in uniformly multiplying avalanche photodiodes: Theory, IEEE Trans.
For a given structure and applied voltage, the electric field is calculated using Eqs. (1) and (2). With the known values for the electric field, the avalanche coefficients and generation current are calculated for each point within the diode. The total current is then calculated using Eqs. (8) and (9). A complete treatment of I–V characteristics would require an examination of all important sources of leakage current, a topic well beyond the scope of this article. Instead, the pho- tocurrent I–V characteristics will be emphasized.
32. J. N. Hollenhorst, Frequency response theory for multilayer photodiodes, J. , LT-8: 531–537, 1990. 33. W. T. , A proposed high-frequency, negative-resistance diode, Bell Syst. Tech. , 37: 401, 1958. 34. R. B. Emmons, Avalanche-photodiode frequency response, J. Appl. , 38: 3705, 1967. 35. H. Melchior and W. T. Lynch, Signal and noise response of high speed germanium avalanche photodiodes, IEEE Trans. Electron. Devices, ED-13: 829–838, 1966. 36. S. D. Personick, Receiver design for digital fiber optic communication systems, I, Bell Syst.